* (1) High DC current gain: hFE = 100 to 200 (VCE = 2 V, IC = 0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.17 V (max) (IC = 1.2 A, IB = 0.12 A) (3) High-speed switching: tf = 70 ns (typ.) (IC = 1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Bas
TPCP8513 Datasheet (298.12 KB)
TPCP8513
298.12 KB
Silicon npn transistor.
Bipolar Transistors Silicon NPN Epitaxial Type
TPCP8513
TPCP8513
1. Applications
* High-Speed Switching
* DC-DC Converters
2. Featur.
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