TPCP8407 - Silicon Dual-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCP8407
Manufacturer	Toshiba ↗ Semiconductor
File Size	378.78 KB
Description	Silicon Dual-Channel MOSFET
Datasheet	TPCP8407-ToshibaSemiconductor.pdf

(1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ. ) P-channel MOSFET: QSW = 5.5 nC (typ. ) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ. ) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ. ) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOSFET: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode N-channel MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) P-chan.

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Published: Aug 27, 2014 |