2SC2270 Datasheet - Toshiba

2SC2270, Silicon NPN Transistor

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2270 STROBO FLASH APPLICATIONS.MEDIMUM POWER AMPLIFIER APPLICATIONS..

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2SC2270_Toshiba.pdf

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Datasheet Details

Part number:

2SC2270

Manufacturer:

Toshiba ↗

File Size:

87.95 KB

Description:

Silicon NPN Transistor

Features

* High DC Current Gain : hFE=140^450 (V CE=2V, I C=0.5A) hFE=70 (Min. )(VCE=2V, I C=4A)
* Low Saturation Voltage : v CE(sat) =1 - 0V (Max -) (Ic=4A » Ib =0 - 1A )
* High Collector Power Dissipation : P C=10W (Tc=25°C), Pc-l. OW (Ta=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTI

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2SC2270 Silicon NPN Transistor Toshiba

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