2SC2270 Datasheet - Toshiba

Silicon NPN Transistor

* High DC Current Gain : hFE=140^450 (V CE=2V, I C=0.5A) hFE=70 (Min.)(VCE=2V, I C=4A)

* Low Saturation Voltage : v CE(sat) =1 - 0V (Max -) (Ic=4A » Ib =0 - 1A )

* High Collector Power Dissipation : P C=10W (Tc=25°C), Pc-l.OW (Ta=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTI

2SC2270

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Silicon npn transistor.

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2SC2270 Silicon NPN Transistor Toshiba

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