* High DC Current Gain : hFE=4000(Min.) (VCE=2V, I c=150mA)
* Low Saturation Voltage : V CE(sat)=1.5V(Max.) (I C=1A, I B=lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VcBO 30 Collector-Emitter Voltage VCEO 30 Emi t er-Base Voltage v EB
2SD549
112.62 KB
Silicon npn transistor.
t : SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER) 2SD549 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 7.9MAX. Unit in m.
📁 Related Datasheet
2SD544 NPN Transistor (INCHANGE)
2SD545 Transistor (Sanyo Semicon Device)
2SD546 NPN Transistor (INCHANGE)
2SD546 SILICON POWER TRANSISTOR (SavantIC)
2SD548 Silicon NPN Transistor (Toshiba)
2SD5011 Power Transistor (Inchange Semiconductor)
2SD504 NPN Transistor (INCHANGE)
2SD5041 Transistors (USHA)
2SD506 NPN Transistor (INCHANGE)
2SD5070 Power Transistor (Inchange Semiconductor)
