Datasheet Details
Part number:
HN1D03F
Manufacturer:
File Size:
465.58 KB
Description:
Silicon Epitaxial Planar Type Diode
TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F HN1D03F Ultra High Speed Switching Application * Built in anode common and cathode common.
Unit 1 * Low forward voltage * Fast reverse recovery time * Small total capacitance Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns
HN1D03F, Silicon Epitaxial Planar Type Diode
TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F HN1D03F Ultra High Speed Switching Application Built in anode common and cathode common.
Unit 1 Low forward voltage Fast reverse recovery time Small total capacitance Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 pF (typ.) Unit 2 Low forward voltage Fast reverse recovery time Small total capacitance Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: C
HN1D03F Distributor
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