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HN1D03F Datasheet - Toshiba

HN1D03F Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F HN1D03F Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Fast reverse recovery time Small total capacitance Q1, Q2: VF (3) = 0.90 V (typ.) Q1, Q2: trr = 1.6 ns (typ.) Q1, Q2: CT = 0.9 pF (typ.) Unit 2 Low forward voltage Fast reverse recovery time Small total capacitance Q3, Q4: VF (3) = 0.92 V (typ.) Q3, Q4: trr = 1.6 ns (typ.) Q3, Q4: C.

HN1D03F-Toshiba.pdf

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Datasheet Details

Part number:

HN1D03F

Manufacturer:

Toshiba ↗

File Size:

465.58 KB

Description:

Silicon epitaxial planar type diode.

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HN1D03F HN1D03F Silicon Epitaxial Planar Type Diode Toshiba

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