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HN1D01F Datasheet - Toshiba

HN1D01F Silicon Epitaxial Planar Type Diode

HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching Application Unit: mm HN1D01F is composed of 2 unit of anode common. Low forward voltage : VF (3) = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 2.2 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward cu.

HN1D01F-Toshiba.pdf

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Datasheet Details

Part number:

HN1D01F

Manufacturer:

Toshiba ↗

File Size:

402.87 KB

Description:

Silicon epitaxial planar type diode.

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HN1D01F HN1D01F Silicon Epitaxial Planar Type Diode Toshiba

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