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HN1D01FU Datasheet - Toshiba

HN1D01FU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) HN1D01FU is composed of 2 unit of anode common. Low forward voltage: VF (3) = 0.92 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 2.2 pF (typ.) Note1: For detail information, please contact our sales. HN1D01FU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum.

HN1D01FU-Toshiba.pdf

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Datasheet Details

Part number:

HN1D01FU

Manufacturer:

Toshiba ↗

File Size:

279.80 KB

Description:

Silicon epitaxial planar type diode.

HN1D01FU Distributor

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HN1D01FU HN1D01FU Silicon Epitaxial Planar Type Diode Toshiba