HN1D01FU Datasheet - Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) HN1D01FU is composed of 2 unit of anode common.

Low forward voltage: VF (3) = 0.92 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 2.2 pF (typ.) Note1: For detail information, please contact our sales.

HN1D01FU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum