HN1D01FE Datasheet - Toshiba

HN1D01FE Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application z HN1D02FU is composed of 2 unit of cathode common. z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) HN1D01FE Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage Maximum (peak) forward current Average forward curr.

HN1D01FE-Toshiba.pdf