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HN1D01FE Datasheet - Toshiba

Datasheet Details

Part number:

HN1D01FE

Manufacturer:

Toshiba ↗

File Size:

241.94 KB

Description:

Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application z HN1D02FU is composed of 2 unit of cathode common.

z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) HN1D01FE

HN1D01FE-Toshiba.pdf

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HN1D01FE, Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FE Ultra High Speed Switching Application z HN1D02FU is composed of 2 unit of cathode common.

z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) HN1D01FE Unit in mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage Maximum (peak) forward current Average forward curr

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