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HN1D02FU Datasheet - Toshiba

HN1D02FU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio AEC-Q101 Qualified (Note1) HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) HN1D02FU Unit: mm Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Max.

HN1D02FU-Toshiba.pdf

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Datasheet Details

Part number:

HN1D02FU

Manufacturer:

Toshiba ↗

File Size:

364.07 KB

Description:

Silicon epitaxial planar type diode.

HN1D02FU Distributor

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HN1D02FU HN1D02FU Silicon Epitaxial Planar Type Diode Toshiba