Datasheet4U Logo Datasheet4U.com

HN1D02FU Datasheet - Toshiba

HN1D02FU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio AEC-Q101 Qualified (Note1) HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) HN1D02FU Unit: mm Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Max.

HN1D02FU Datasheet (364.07 KB)

Preview of HN1D02FU PDF
HN1D02FU Datasheet Preview Page 2 HN1D02FU Datasheet Preview Page 3

Datasheet Details

Part number:

HN1D02FU

Manufacturer:

Toshiba ↗

File Size:

364.07 KB

Description:

Silicon epitaxial planar type diode.

📁 Related Datasheet

HN1D02F Silicon Epitaxial Planar Type Diode (Toshiba)

HN1D02FE Silicon Epitaxial Planar Type Diode (Toshiba)

HN1D01F Silicon Epitaxial Planar Type Diode (Toshiba)

HN1D01FE Silicon Epitaxial Planar Type Diode (Toshiba)

HN1D01FU Silicon Epitaxial Planar Type Diode (Toshiba)

HN1D03F Silicon Epitaxial Planar Type Diode (Toshiba)

HN1D03FU Silicon Epitaxial Planar Type Diode (Toshiba)

HN1D04FU Silicon Epitaxial Planar Type Diode (Toshiba)

TAGS

HN1D02FU Silicon Epitaxial Planar Type Diode Toshiba

HN1D02FU Distributor