HN1D02FU Datasheet - Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio AEC-Q101 Qualified (Note1) HN1D02FU is composed of 2 unit of cathode common.

Low forward voltage : VF (3) = 0.90 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) HN1D02FU Unit: mm Note1: For detail information, please contact our sales.

Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Max