HN1D02F Datasheet - Toshiba

HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Ultra High Speed Switching Application Unit: mm The HN1D02F is composed of two (2) cathode common units.

Low forward voltage : VF (3) = 0.90 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) f