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HN1D02FE - Silicon Epitaxial Planar Type Diode

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Datasheet Details

Part number HN1D02FE
Manufacturer Toshiba
File Size 231.25 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet HN1D02FE Datasheet
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Other Datasheets by Toshiba
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Full PDF Text Transcription

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TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application HN1D02FE Unit: mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : VF (3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P 80 V 300* mA 100* mA 2* A 100** mW 1. ANODE 2. ANODE 3. CATHODE 4. ANODE 5. ANODE 6.
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