Datasheet Specifications
- Part number
- MG100J1BS11
- Manufacturer
- Toshiba ↗
- File Size
- 166.26 KB
- Datasheet
- MG100J1BS11_ToshibaSemiconductor.pdf
- Description
- N-Channel IGBT
Description
TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhance.
Applications
* Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperatureMG100J1BS11 Distributors
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