MG100J1BS11 Datasheet - Toshiba

MG100J1BS11 N-Channel IGBT

TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES V.

MG100J1BS11 Datasheet (166.26 KB)