MG100J2YS50 Datasheet (Toshiba)

MG100J2YS50, N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG100J2YS50 Unit: mm l The electrodes are isolated from case.

l High input impedance.

l Includes a complete half bridge in one package.

l Enhancement-mode.

l High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat)=2.70V (Max) (IC=100A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage