MG100J2YS50 Datasheet - Toshiba

MG100J2YS50 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG100J2YS50 Unit: mm l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode. l High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat)=2.70V (Max) (IC=100A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage .

MG100J2YS50 Datasheet (224.39 KB)