MG100J7KS50 Datasheet - Toshiba

MG100J7KS50 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 High Power Switching Applications Motor Control Applications MG100J7KS50 Unit: mm l The electrodes are isolated from case. l High input impedance l 7 IGBTs built into 1 package. l Enhancement-mode l High speed type IGBT : VCE (sat) = 2.5 V (max) (@IC = 100 A) : tf = 0.5 µs (max) (@IC = 100 A) : trr = 0.3 µs (max) (@IF = 100 A) Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 520g (typ.) ― ― 2-110A1B 1 2001-08-16 Inverter Stage Maximum Ra.

MG100J7KS50 Datasheet (104.09 KB)