MG100J6ES50 Datasheet - Toshiba

MG100J6ES50 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100J6ES50 High Power Switching Applications Motor Control Applications MG100J6ES50 Unit: mm l The electrodes are isolated from case. l High input impedance. l 6 IGBTs built into 1 package. l Enhancement-mode. l High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 100A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 505g (Typ.) ― ― 2-94A2A 000707EAA1 TOSHIBA is cont.

MG100J6ES50 Datasheet (230.28 KB)