Datasheet Specifications
- Part number
- MG100J6ES50
- Manufacturer
- Toshiba ↗
- File Size
- 230.28 KB
- Datasheet
- MG100J6ES50_ToshibaSemiconductor.pdf
- Description
- N-Channel IGBT
Description
TOSHIBA GTR Module Silicon N Channel IGBT MG100J6ES50 High Power Switching Applications Motor Control Applications MG100J6ES50 Unit: mm l The electr.
Applications
* Motor Control Applications MG100J6ES50 Unit: mm l The electrodes are isolated from case. l High input impedance. l 6 IGBTs built into 1 package. l Enhancement-mode. l High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC =MG100J6ES50 Distributors
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