MG100J1ZS40 Datasheet - Toshiba

MG100J1ZS40 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 High Power Switching Applications Motor Control Applications MG100J1ZS40 Unit: mm l High input impedance l High spee : tf = 0.35µs (max) trr = 0.15µs (max) l Low saturation voltage : VCE (sat) = 3.5V (max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms Forward curre.

MG100J1ZS40 Datasheet (192.90 KB)