MG100Q1ZS40 Datasheet - Toshiba

MG100Q1ZS40 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-108A3A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector curren.

MG100Q1ZS40 Datasheet (190.98 KB)