MG100Q2YS40 Datasheet - Toshiba

MG100Q2YS40 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 High Power Switching applications Motor Control Applications MG100Q2YS40 Unit: mm l High input impedance l High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter.

MG100Q2YS40_ToshibaSemiconductor.pdf