MG100Q2YS51 Datasheet - Toshiba

MG100Q2YS51 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 MG100Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 430g Characteristic Collector-emitter voltage Gate-.

MG100Q2YS51_ToshibaSemiconductor.pdf