MG100Q2YS50 Datasheet (Toshiba)

MG100Q2YS50, N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 MG100Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l Includes a complete half bridge in one package.

l The electrodes are isolated from case.

Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 255g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-