MG100Q2YS42 Datasheet - Toshiba

MG100Q2YS42 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 MG100Q2YS42 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gat.

MG100Q2YS42_ToshibaSemiconductor.pdf