MG100Q1ZS50 Datasheet - Toshiba

MG100Q1ZS50 N-Channel IGBT

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 255g Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forwar.

MG100Q1ZS50 Datasheet (251.20 KB)