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MG100Q2YS65H Silicon N-Channel IGBT

MG100Q2YS65H Description

MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications Unit: mm * * * High.

MG100Q2YS65H Applications

* Unit: mm
* High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ. ) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage

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Silicon N-Channel IGBT Toshiba
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