Description
The TC58NVG3D2 is a single 3.3 V 8 Gbit (8,984,199,168 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 1028 blocks.
Features
- Organization Memory cell array Register Page size Block size.
- TC58NVG3D2E 8568 × 128.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Mode control Serial input/output Command control Number of valid blocks Min 984 blocks Max 1028 blocks Power supply VCC = 2.7 V to 3.6 V VCCQ = 2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block.
TC58NVG3D2ETA00_Toshiba.pdf
