TC58NVG3D2ETA00 8 GBIT (1G X 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG3D2ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT (1G × 8 BIT) CMOS NAND E PROM (Mul.
The TC58NVG3D2 is a single 3.

📥 Download Datasheet

TC58NVG3D2ETA00 Datasheet Preview — Preview of TC58NVG3D2ETA00 PDF

Datasheet Specifications

Part number: TC58NVG3D2ETA00
Manufacturer: Toshiba ↗
File Size: 482.59 KB
Datasheet: TC58NVG3D2ETA00_Toshiba.pdf
Description: 8 GBIT (1G X 8 BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size
* TC58NVG3D2E 8568 × 128.5K × 8 8568 × 8 8568 bytes (1M + 47 K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Mode control Serial input/output Command control Number of v

TC58NVG3D2ETA00 Distributors

📁 Related Datasheet

TC58NS256DC TC581282AXB TC58128FT TC58128FTI TC5816BDC TC5816BFT

📌 All Tags

TC58NVG3D2ETA00 GBIT BIT CMOS NAND E2PROM Toshiba

Toshiba TC58NVG3D2ETA00-like datasheet