TIM1414-4A Microwave Power GaAs FET

Toshiba

Description

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) .

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Datasheet Specifications

Part number: TIM1414-4A
Manufacturer: Toshiba ↗
File Size: 350.05 KB
Datasheet: TIM1414-4A_Toshiba.pdf
Description: Microwave Power GaAs FET

Features

* High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz
* High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz
* Broad Band Internally Matched
* Hermetically sealed package RF Performance Speciﬁcations (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Pow

Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended

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TIM1414-4A Microwave Power GaAs FET Toshiba

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