* (1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID
TK4R3E06PL Datasheet (497.98 KB)
TK4R3E06PL
497.98 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS
*-H)
TK4R3E06PL
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulat.
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