Datasheet4U.com

TK4R3E06PL - Silicon N-channel MOSFET

Toshiba

📥 Download Datasheet

TK4R3E06PL Datasheet Preview — Preview of TK4R3E06PL PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK4R3E06PL
Manufacturer	Toshiba ↗
File Size	497.98 KB
Description	Silicon N-channel MOSFET
Datasheet	TK4R3E06PL-Toshiba.pdf

TK4R3E06PL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ. ) (3) Small output charge: Qoss = 39 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK4R3E06PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

📁 TK4R3E06PL Similar Datasheet

TK40A06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK40A08K3 - MOSFET (Toshiba Semiconductor)
TK40A10J1 - MOSFET (Toshiba Semiconductor)
TK40A10K3 - Field Effect Transistor (Toshiba Semiconductor)
TK40A10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK40D10J1 - MOSFET (Toshiba Semiconductor)
TK40E06N1 - N-Channel MOSFET (INCHANGE)
TK40E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

TK4R3A06PL - Silicon N-channel MOSFET
TK4R1A10PL - Silicon N-Channel MOSFET
TK4R4P06PL - Silicon N-Channel MOSFET
TK4R9E15Q5 - Silicon N-channel MOSFET
TK40S06N1L - N-channel MOSFET
TK430A60F - Silicon N-Channel MOSFET

Published: Aug 7, 2019 |