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TK4R9E15Q5 - Silicon N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TK4R9E15Q5
Manufacturer	Toshiba ↗
File Size	520.15 KB
Description	Silicon N-channel MOSFET
Datasheet	TK4R9E15Q5-Toshiba.pdf

TK4R9E15Q5 Product details

Features

(1) Fast reverse recovery time: trr = 50 ns (typ. ) (2) Small reverse recovery charge : Qrr = 50 nC (typ. ) (3) Small gate charge: QSW = 26 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 4.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 2.2 mA) 3. Packaging and Internal Circuit TK4R9E15Q5 TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2023-2024 1 Toshiba Electronic Devices & Storage Corporat.

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Published: Feb 28, 2025 |