* (1) Fast reverse recovery time: trr = 50 ns (typ.) (2) Small reverse recovery charge : Qrr = 50 nC (typ.) (3) Small gate charge: QSW = 26 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode:
TK4R9E15Q5 Datasheet (520.15 KB)
TK4R9E15Q5
520.15 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS
*-H)
TK4R9E15Q5
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulat.
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