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TK5R1E06PL Datasheet - Toshiba

TK5R1E06PL Silicon N-Channel MOSFET

TK5R1E06PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.) (3) Small output charge: Qoss = 32 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID =

TK5R1E06PL-Toshiba.pdf

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Datasheet Details

Part number:

TK5R1E06PL

Manufacturer:

Toshiba ↗

File Size:

498.73 KB

Description:

Silicon n-channel mosfet.

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