TK6P65W Datasheet - Toshiba

TK6P65W, N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK6P65W 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.89 Ω(typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.18 mA) 3. Packaging and Internal Circuit TK6P65W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absol

TK6P65W-Toshiba.pdf