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TK6P65W - N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK6P65W
Manufacturer	Toshiba
File Size	385.04 KB
Description	N-Channel MOSFET
Datasheet	TK6P65W-Toshiba.pdf

TK6P65W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.89 Ω(typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.18 mA) 3. Packaging and Internal Circuit TK6P65W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note.

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Published: Nov 9, 2020 |