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TPCC8061-H Datasheet - Toshiba

TPCC8061-H Field Effect Transistor

TPCC8061-H Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi

TPCC8061-H_Toshiba.pdf

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Datasheet Details

Part number:

TPCC8061-H

Manufacturer:

Toshiba ↗

File Size:

258.60 KB

Description:

Field effect transistor.

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TPCC8061-H TPCC8061-H Field Effect Transistor Toshiba

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