TPCC8061-H - Field Effect Transistor
TPCC8061-H Features
* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi
