TPCC8061-H - Field Effect Transistor

Product Overview

Toshiba

Part number	TPCC8061-H
Manufacturer	Toshiba
File Size	258.60 KB
Description	Field Effect Transistor
Datasheet	TPCC8061-H Datasheet
Additional preview pages of the TPCC8061-H datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 1 2011-06-06 Rev.2.0 Free Datasheet http://www. datasheet4u. com/ TPCC8061-H 4. Absolute Maximum Ratings (Note) (Ta =.

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Published: Nov 11, 2013 |