* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TPCC8069 Datasheet (237.32 KB)
TPCC8069
237.32 KB
Mosfet.
TPCC8069
MOSFETs Silicon N-channel MOS (U-MOS)
TPCC8069
1. Applications
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* Motor Drivers DC-DC Converters Switching Volta.
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