Datasheet4U Logo Datasheet4U.com

TPCC8066-H Datasheet - Toshiba

TPCC8066-H MOSFETs

TPCC8066-H Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.2 nC (typ.) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packagi

TPCC8066-H-Toshiba.pdf

Preview of TPCC8066-H PDF
TPCC8066-H Datasheet Preview Page 2 TPCC8066-H Datasheet Preview Page 3

Datasheet Details

Part number:

TPCC8066-H

Manufacturer:

Toshiba ↗

File Size:

247.32 KB

Description:

Mosfets.

📁 Related Datasheet

TPCC8061-H Field Effect Transistor (Toshiba)

TPCC8062-H MOSFETs (Toshiba)

TPCC8064-H MOSFETs (Toshiba)

TPCC8065-H Field Effect Transistor (Toshiba)

TPCC8067-H Silicon N-Channel MOSFET (Toshiba)

TPCC8069 MOSFET (Toshiba)

TPCC8001-H Field Effect Transistor (Toshiba Semiconductor)

TPCC8002-H Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TPCC8066-H TPCC8066-H MOSFETs Toshiba

TPCC8066-H Distributor