TPCC8007 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TPCC8007
Manufacturer	Toshiba Semiconductor
File Size	226.80 KB
Description	MOSFETs
Datasheet	TPCC8007 Datasheet
Additional preview pages of the TPCC8007 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ. ) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curr.

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Published: Sep 20, 2014 |