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TPCC8007

MOSFETs

TPCC8007 Features

* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source

TPCC8007 Datasheet (226.80 KB)

Preview of TPCC8007 PDF

Datasheet Details

Part number:

TPCC8007

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

226.80 KB

Description:

Mosfets.

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