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TPCC8070 Datasheet - Toshiba

TPCC8070 Silicon N-Channel MOSFET

TPCC8070 Features

* (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCC8070 TSON Advance 1,2,3: Source 4: Ga

TPCC8070-Toshiba.pdf

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Datasheet Details

Part number:

TPCC8070

Manufacturer:

Toshiba ↗

File Size:

276.32 KB

Description:

Silicon n-channel mosfet.

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TPCC8070 TPCC8070 Silicon N-Channel MOSFET Toshiba

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