* (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPCC8070 TSON Advance 1,2,3: Source 4: Ga
TPCC8070 Datasheet (276.32 KB)
TPCC8070
276.32 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS
*)
TPCC8070
1. Applications
* Motor Drivers
* DC-DC Converters
* Switching Voltage Reg.
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