* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
TPCC8073 Datasheet (233.31 KB)
TPCC8073
233.31 KB
Mosfets.
TPCC8073
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8073
1. Applications
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* Lithium-Ion Secondary Batteries Power Manageme.
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