* (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 33 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TPCC8076 1,2, 3
TPCC8076 Datasheet (263.70 KB)
TPCC8076
263.70 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8076
1. Applications
* Lithium-Ion Secondary Batteries
* Notebook PCs
* Mobile Equi.
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