* (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 4.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
TPCC8074 Datasheet (257.03 KB)
TPCC8074
257.03 KB
Field effect transistor.
TPCC8074
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCC8074
1. Applications
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* Lithium-Ion Secondary Batteries Power Manageme.
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