TPCC8008 Datasheet - Toshiba Semiconductor

TPCC8008 - Field Effect Transistor Silicon N-Channel MOS Type

TPCC8008 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCC8008 Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 4.5 mΩ (typ.) ( VGS = 10 V) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltag.

TPCC8008 Features

* ment, office equipment, measuring equipment, industrial robot

TPCC8008_ToshibaSemiconductor.pdf