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TPCC8065-H Datasheet - Toshiba

TPCC8065-H Field Effect Transistor

TPCC8065-H Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 4.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 11.7 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packa

TPCC8065-H_Toshiba.pdf

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Datasheet Details

Part number:

TPCC8065-H

Manufacturer:

Toshiba ↗

File Size:

254.75 KB

Description:

Field effect transistor.

TPCC8065-H Distributor

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TPCC8065-H TPCC8065-H Field Effect Transistor Toshiba