TPCC8006-H Datasheet - Toshiba Semiconductor

TPCC8006-H - Field Effect Transistor

TPCC8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8006-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 67 S (typ.) L

TPCC8006-H Features

* xpressly stated in this document. Product is neither intended

TPCC8006-H-ToshibaSemiconductor.pdf