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TPCP8606 - Silicon PNP Transistor

Toshiba

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Datasheet Details

Part number	TPCP8606
Manufacturer	Toshiba ↗
File Size	303.12 KB
Description	Silicon PNP Transistor
Datasheet	TPCP8606-Toshiba.pdf

TPCP8606 Product details

Features

(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ. ) (IC = -1.2 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8606 4. Ab.

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Published: Jan 30, 2024 |