TPCP8602 Datasheet - Toshiba Semiconductor

TOSHIBA Transistor Silicon PNP Epitaxial Type TPCP8602 TPCP8602 High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1 High DC current gain: hFE = 200 to 500 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 0.475 1 4 0.