TPCP8601 Datasheet - Toshiba Semiconductor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1 High DC current gain: hFE = 200 to 500 (IC = 0.6 A) Low collector-emitter saturation: VCE (sat) = 0.19 V (max) High-speed switching: tf = 35 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) 0.475 1 4 0.65 2.9±0.1 S 0.025 S 0