* (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitte
TPCP8607 Datasheet (306.44 KB)
TPCP8607
306.44 KB
Silicon pnp transistor.
Bipolar Transistors Silicon PNP Epitaxial Type
TPCP8607
TPCP8607
1. Applications
* High-Speed Switching
* DC-DC Converters
2. Featur.
📁 Related Datasheet
TPCP8601 Silicon PNP Transistor (Toshiba Semiconductor)
TPCP8602 Silicon PNP Transistor (Toshiba Semiconductor)
TPCP8603 MOSFET (Toshiba Semiconductor)
TPCP8604 Silicon PNP Transistor (Toshiba)
TPCP8605 Silicon PNP Transistor (Toshiba)
TPCP8606 Silicon PNP Transistor (Toshiba)
TPCP8608 Silicon PNP Transistor (Toshiba)
TPCP8001-H MOSFET (Toshiba Semiconductor)
TPCP8002 MOSFET (Toshiba Semiconductor)
TPCP8003-H MOSFET (Toshiba Semiconductor)
