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TPCP8607 - Silicon PNP Transistor

Toshiba

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Datasheet Details

Part number	TPCP8607
Manufacturer	Toshiba ↗
File Size	306.44 KB
Description	Silicon PNP Transistor
Datasheet	TPCP8607-Toshiba.pdf

TPCP8607 Product details

Features

(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ. ) (IC = -0.75 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Base 5. Collector 6. Collector 7. Collector 8. Collector ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-01 2023-01-16 Rev.2.0 TPCP8607 4.

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Published: Jan 30, 2024 |