* (1) High DC current gain: hFE = 200 to 500 (VCE = -2 V, IC = -0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.18 V (max) (IC = -1.0 A, IB = -33 mA) (3) High-speed switching: tf = 90 ns (typ.) (IC =1.0 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4.
TPCP8608 Datasheet (452.26 KB)
TPCP8608
452.26 KB
Silicon pnp transistor.
Bipolar Transistors Silicon PNP Epitaxial Type
TPCP8608
TPCP8608
1. Applications
* High-Speed Switching
* DC-DC Converters
2. Featur.
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