* z A structure that incorporates Bi-CMOS control circuitry and a power MOSFET (DMOS) on a single chip. z One side of the load can be grounded. SON8-P-0303-0.65 z Can be directly driven from a microprocessor. z Overtemperature and load short-circuit (Overcurrent) protections are built in. Weight:
TPD1052F Datasheet (257.30 KB)
TPD1052F
257.30 KB
Silicon monolithic power mos.
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1052F High-side Power Switch for Motor, Solenoid and Lamp Drivers .
📁 Related Datasheet
TPD1053F Silicon Monolithic Power MOS (Toshiba)
TPD1054F Low-Side Switch (Toshiba)
TPD1055FA High side power switch (Toshiba)
TPD1058FA Low-Side Switch (Toshiba)
TPD1008SA High-side Power Switch (Toshiba Semiconductor)
TPD1011S High-side Power Switch (Toshiba Semiconductor)
TPD1018F HIGH SIDE POWER SWITCH (Toshiba Semiconductor)
TPD1024S Silicon Monolithic Power MOS (Toshiba Semiconductor)
TPD1028BS Silicon Monolithic Power MOS (Toshiba Semiconductor)
TPD1030F 2-IN-1 Low-Side Switch (Toshiba Semiconductor)
