* (1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 4.9 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit
TPH4R003NL Datasheet (234.57 KB)
TPH4R003NL
234.57 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH4R003NL
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulators
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