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TPH4R003NL Datasheet - Toshiba

TPH4R003NL Silicon N-channel MOSFET

TPH4R003NL Features

* (1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 4.9 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPH4R003NL Datasheet (234.57 KB)

Preview of TPH4R003NL PDF

Datasheet Details

Part number:

TPH4R003NL

Manufacturer:

Toshiba ↗

File Size:

234.57 KB

Description:

Silicon n-channel mosfet.

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