Datasheet Specifications
- Part number
- TPH4R10ANL
- Manufacturer
- Toshiba ↗
- File Size
- 609.71 KB
- Datasheet
- TPH4R10ANL-Toshiba.pdf
- Description
- Silicon N-channel MOSFET
Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R10ANL 1.Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators .Features
* (1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ. ) (3) Small output charge : Qoss = 74 nC (typ. ) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ. )(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 100 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V,Applications
* High-Efficiency DC-DC ConvertersTPH4R10ANL Distributors
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