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TPH4R10ANL Datasheet - Toshiba

TPH4R10ANL Silicon N-channel MOSFET

TPH4R10ANL Features

* (1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ.) (3) Small output charge : Qoss = 74 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 100 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V,

TPH4R10ANL-Toshiba.pdf

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Datasheet Details

Part number:

TPH4R10ANL

Manufacturer:

Toshiba ↗

File Size:

609.71 KB

Description:

Silicon n-channel mosfet.

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