Datasheet Specifications
- Part number
- TPH4R008NH
- Manufacturer
- Toshiba ↗
- File Size
- 261.11 KB
- Datasheet
- TPH4R008NH_Toshiba.pdf
- Description
- Silicon N-channel MOSFET
Description
TPH4R008NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R008NH 1.Applications * * * DC-DC Converters Switching Voltage Regul.Features
* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 18 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. PackaginTPH4R008NH Distributors
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