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TPH4R008NH Silicon N-channel MOSFET

TPH4R008NH Description

TPH4R008NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R008NH 1.Applications * * * DC-DC Converters Switching Voltage Regul.

TPH4R008NH Features

* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 18 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packagin

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Silicon N-channel MOSFET Toshiba
Toshiba TPH4R008NH-like datasheet