* (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 22 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packagi
TPH4R50ANH Datasheet (257.68 KB)
TPH4R50ANH
257.68 KB
Field effect transistor.
TPH4R50ANH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH4R50ANH
1. Applications
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* DC-DC Converters Switching Voltage Regul.
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